MCH6202-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MCH6202-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Number of Pins
6
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
1W
Base Part Number
MCH6202
Pin Count
6
Power - Max
1W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
225mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
225mV @ 15mA, 750mA
Collector Emitter Breakdown Voltage
30V
Max Breakdown Voltage
30V
Frequency - Transition
500MHz
Collector Base Voltage (VCBO)
40V
hFE Min
200
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.218522
$0.218522
10
$0.206152
$2.06152
100
$0.194483
$19.4483
500
$0.183475
$91.7375
1000
$0.173090
$173.09
MCH6202-TL-E Product Details
MCH6202-TL-E Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 225mV @ 15mA, 750mA means Ic has reached its maximum value(saturated).The breakdown input voltage is 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
MCH6202-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 225mV @ 15mA, 750mA
MCH6202-TL-E Applications
There are a lot of ON Semiconductor MCH6202-TL-E applications of single BJT transistors.