2N6341 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6341 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2001
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
150V
Max Power Dissipation
200W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
25A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
2N6341
Pin Count
2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
40MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
25A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10A 2V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 2.5A, 25A
Collector Emitter Breakdown Voltage
150V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
1.8V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
50
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$72.98000
$72.98
500
$72.2502
$36125.1
1000
$71.5204
$71520.4
1500
$70.7906
$106185.9
2000
$70.0608
$140121.6
2500
$69.331
$173327.5
2N6341 Product Details
2N6341 Overview
DC current gain in this device equals 30 @ 10A 2V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 1.8V, it allows for maximum design flexibility.A VCE saturation (Max) of 1.8V @ 2.5A, 25A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 6V for high efficiency.This device has a current rating of 25A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 40MHz.Collector current can be as low as 25A volts at its maximum.
2N6341 Features
the DC current gain for this device is 30 @ 10A 2V a collector emitter saturation voltage of 1.8V the vce saturation(Max) is 1.8V @ 2.5A, 25A the emitter base voltage is kept at 6V the current rating of this device is 25A a transition frequency of 40MHz
2N6341 Applications
There are a lot of ON Semiconductor 2N6341 applications of single BJT transistors.