2N6426

new-10%

Manufacturer part number:2N6426

Manufacturer:ON Semiconductor

Description:2N6426 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2N6426 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Number of Pins	3
Supplier Device Package	TO-92-3
Weight	201mg
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	40V
Max Power Dissipation	625mW
Current Rating	1.2A
Base Part Number	2N6426
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	625mW
Power - Max	625mW
Transistor Type	NPN - Darlington
Collector Emitter Voltage (VCEO)	40V
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30000 @ 100mA 5V
Current - Collector Cutoff (Max)	1μA
Vce Saturation (Max) @ Ib, Ic	1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage	40V
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	500mA
Collector Emitter Saturation Voltage	1.2V
Max Breakdown Voltage	40V
Collector Base Voltage (VCBO)	40V
Emitter Base Voltage (VEBO)	12V
hFE Min	30000
Continuous Collector Current	500mA
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	Non-RoHS Compliant
Lead Free	Lead Free