2SARA41CT116R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SARA41CT116R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
200mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 6V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
50mA
Frequency - Transition
140MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.312000
$0.312
10
$0.294340
$2.9434
100
$0.277679
$27.7679
500
$0.261961
$130.9805
1000
$0.247133
$247.133
2SARA41CT116R Product Details
2SARA41CT116R Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 6V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.This device displays a 120V maximum voltage - Collector Emitter Breakdown.
2SARA41CT116R Features
the DC current gain for this device is 180 @ 2mA 6V the vce saturation(Max) is 500mV @ 1mA, 10mA
2SARA41CT116R Applications
There are a lot of ROHM Semiconductor 2SARA41CT116R applications of single BJT transistors.