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2SARA41CT116R

2SARA41CT116R

2SARA41CT116R

ROHM Semiconductor

2SARA41CT116R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SARA41CT116R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 140MHz
RoHS StatusROHS3 Compliant
In-Stock:14595 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.312000$0.312
10$0.294340$2.9434
100$0.277679$27.7679
500$0.261961$130.9805
1000$0.247133$247.133

2SARA41CT116R Product Details

2SARA41CT116R Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 6V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.This device displays a 120V maximum voltage - Collector Emitter Breakdown.

2SARA41CT116R Features


the DC current gain for this device is 180 @ 2mA 6V
the vce saturation(Max) is 500mV @ 1mA, 10mA

2SARA41CT116R Applications


There are a lot of ROHM Semiconductor 2SARA41CT116R applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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