MMBTA06-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBTA06-7-F Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBTA06
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
4V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
500mA
Height
1.1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.04184
$0.12552
6,000
$0.03680
$0.2208
15,000
$0.03176
$0.4764
30,000
$0.03008
$0.9024
75,000
$0.02840
$2.13
150,000
$0.02560
$3.84
MMBTA06-7-F Product Details
MMBTA06-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.A constant collector voltage of 500mA is necessary for high efficiency.Keeping the emitter base voltage at 4V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.As a result, it can handle voltages as low as 80V volts.Maximum collector currents can be below 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 4V the current rating of this device is 500mA a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated MMBTA06-7-F applications of single BJT transistors.