KST2222AMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KST2222AMTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
600mA
Frequency
300MHz
Base Part Number
KSP2222
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Turn Off Time-Max (toff)
285ns
Height
970μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
KST2222AMTF Product Details
KST2222AMTF Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.The maximum collector current is 600mA volts.
KST2222AMTF Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V the current rating of this device is 600mA a transition frequency of 300MHz
KST2222AMTF Applications
There are a lot of ON Semiconductor KST2222AMTF applications of single BJT transistors.