MMBTA70LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 5mA 10V.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at -100mA for high efficiency.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.125MHz is present in the transition frequency.Input voltage breakdown is available at 40V volts.Maximum collector currents can be below 100mA volts.
MMBTA70LT1G Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is -100mA
a transition frequency of 125MHz
MMBTA70LT1G Applications
There are a lot of ON Semiconductor MMBTA70LT1G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
