2N6488G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6488G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.8W
Peak Reflow Temperature (Cel)
260
Current Rating
15A
Frequency
5MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6488
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
5MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3.5V @ 5A, 15A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
5MHz
Collector Emitter Saturation Voltage
3.5V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
15.748mm
Length
10.2616mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.91000
$0.91
50
$0.77080
$38.54
100
$0.63320
$63.32
500
$0.52308
$261.54
1,000
$0.41297
$0.41297
2N6488G Product Details
2N6488G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 5A 4V.The collector emitter saturation voltage is 3.5V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.5V @ 5A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 5MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
2N6488G Features
the DC current gain for this device is 20 @ 5A 4V a collector emitter saturation voltage of 3.5V the vce saturation(Max) is 3.5V @ 5A, 15A the emitter base voltage is kept at 5V the current rating of this device is 15A a transition frequency of 5MHz
2N6488G Applications
There are a lot of ON Semiconductor 2N6488G applications of single BJT transistors.