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2N6488G

2N6488G

2N6488G

ON Semiconductor

2N6488G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N6488G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1.8W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 5MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6488
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 5MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 5MHz
Collector Emitter Saturation Voltage 3.5V
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.91000 $0.91
50 $0.77080 $38.54
100 $0.63320 $63.32
500 $0.52308 $261.54
1,000 $0.41297 $0.41297
2N6488G Product Details

2N6488G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 5A 4V.The collector emitter saturation voltage is 3.5V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.5V @ 5A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 5MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

2N6488G Features


the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz

2N6488G Applications


There are a lot of ON Semiconductor 2N6488G applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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