BC33725TAR Overview

In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Breakdown input voltage is 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.

BC33725TAR Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA

BC33725TAR Applications

There are a lot of ON Semiconductor BC33725TAR applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface