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PBHV9560ZX

PBHV9560ZX

PBHV9560ZX

Nexperia USA Inc.

PBHV9560ZX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV9560ZX Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Max Power Dissipation 650mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 650mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 600V
Transition Frequency 38MHz
Max Breakdown Voltage 600V
Frequency - Transition 38MHz
Collector Base Voltage (VCBO) 600V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.22932 $0.22932
2,000 $0.21168 $0.42336
5,000 $0.19992 $0.9996
10,000 $0.19404 $1.9404
PBHV9560ZX Product Details

PBHV9560ZX Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 50mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 38MHz.An input voltage of 600V volts is the breakdown voltage.A maximum collector current of 500mA volts can be achieved.

PBHV9560ZX Features


the DC current gain for this device is 70 @ 50mA 10V
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 38MHz

PBHV9560ZX Applications


There are a lot of Nexperia USA Inc. PBHV9560ZX applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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