MMBT3904LP-7 Overview

In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As you can see, the part has a transition frequency of 300MHz.During maximum operation, collector current can be as low as 200mA volts.

MMBT3904LP-7 Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT3904LP-7 Applications

There are a lot of Diodes Incorporated MMBT3904LP-7 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver