2N6517RLRAG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 50mA 10V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 40MHz is present in the part.When collector current reaches its maximum, it can reach 500mA volts.
2N6517RLRAG Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517RLRAG Applications
There are a lot of ON Semiconductor 2N6517RLRAG applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
