2N7000 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
2N7000 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Copper, Silver, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Weight
201mg
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
5Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
200mA
Base Part Number
2N7000
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
400mW Ta
Element Configuration
Single
Power Dissipation
400mW
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
200mA
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Input Capacitance
40pF
Drain to Source Resistance
1.2Ohm
Rds On Max
5 Ω
Nominal Vgs
2.1 V
Height
5.2mm
Length
4.8mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.47000
$0.47
10
$0.37000
$3.7
100
$0.25570
$25.57
500
$0.17718
$88.59
2N7000 Product Details
2N7000 Description
2N7000 is a well-known N-channel MOSFET in a TO-92 package. Unlike BJT transistors, which are current-controlled devices, MOSFETs are devices that are controlled by applying a voltage to their gate. One of the key features of MOSFET technology is that the transistor requires very little or no input current to control the load, making MOSFETs ideal for use as amplifiers. The 2N7000 also has all these features, so it can be used in many general-purpose switching applications. It offers good performance when used as an amplifier, so you can use it for audio and other signal amplification purposes.
2N7000 Features
High cell density High saturation current Drain-to-source voltage of 60 V Operating temperature of -55 °C to 150 °C Rugged, reliable, and fast switching performance
2N7000 Applications
IC output Audio preamplifier Audio amplification Microcontroller output Various signal amplification Switch or control loads under 200mA