2SA1708T-AN Overview

DC current gain in this device equals 200 @ 100mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 40mA, 400mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Collector current can be as low as 1A volts at its maximum.

2SA1708T-AN Features

the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 40mA, 400mA
the emitter base voltage is kept at 6V

2SA1708T-AN Applications

There are a lot of ON Semiconductor 2SA1708T-AN applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting