PBSS4330X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4330X,135 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.6W
Terminal Form
FLAT
Frequency
100MHz
Base Part Number
PBSS4330
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.6W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.097840
$0.09784
500
$0.071941
$35.9705
1000
$0.059951
$59.951
2000
$0.055001
$110.002
5000
$0.051403
$257.015
10000
$0.047816
$478.16
15000
$0.046244
$693.66
50000
$0.045471
$2273.55
PBSS4330X,135 Product Details
PBSS4330X,135 Overview
In this device, the DC current gain is 270 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 300mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 100MHz.An input voltage of 30V volts is the breakdown voltage.Collector current can be as low as 3A volts at its maximum.
PBSS4330X,135 Features
the DC current gain for this device is 270 @ 1A 2V the vce saturation(Max) is 300mV @ 300mA, 3A the emitter base voltage is kept at 6V a transition frequency of 100MHz
PBSS4330X,135 Applications
There are a lot of Nexperia USA Inc. PBSS4330X,135 applications of single BJT transistors.