Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2PD602AS,115

  • 2PD602AS,115
  • 2PD602AS,115

2PD602AS,115

2PD602AS,115

NXP USA Inc.

2PD602AS,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

SOT-23

2PD602AS,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2PD602
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 180MHz
Frequency - Transition 180MHz
VCEsat-Max 0.6 V
Collector-Base Capacitance-Max 15pF
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.02000 $0.02
500 $0.0198 $9.9
1000 $0.0196 $19.6
1500 $0.0194 $29.1
2000 $0.0192 $38.4
2500 $0.019 $47.5
2PD602AS,115 Product Details

2PD602AS,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 170 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.

2PD602AS,115 Features


the DC current gain for this device is 170 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 180MHz

2PD602AS,115 Applications


There are a lot of NXP USA Inc. 2PD602AS,115 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

Related Part Number

PBSS4330X,135
Nexperia USA Inc.
PBSS4330X,135
$0 $/piece
BD680AG
ON Semiconductor
BD680AG
$0 $/piece
SMMBT2222ALT3G
ON Semiconductor
SMMBT2222ALT3G
$0 $/piece
BCW60C
ON Semiconductor
BCW60C
$0 $/piece
ZXTN25040DFHTA
Diodes Incorporated
ZXTN25040DFHTA
$0 $/piece
2N5322 PBFREE
Central Semiconductor Corp
2N5322 PBFREE
$0 $/piece
MJE4343G
ON Semiconductor
MJE4343G
$0 $/piece
TTA0002(Q)
Toshiba Semiconductor and Storage
TTA0002(Q)
$0 $/piece
2N6052G
ON Semiconductor
2N6052G
$0 $/piece
FJX733YTF
ON Semiconductor
FJX733YTF
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News