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NJVMJD122T4G-VF01

  • NJVMJD122T4G-VF01
  • NJVMJD122T4G-VF01

NJVMJD122T4G-VF01

NJVMJD122T4G-VF01

ON Semiconductor

NJVMJD122T4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD122T4G-VF01 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MJD122
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection COLLECTOR
Power - Max 1.75W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 4V @ 8A, 80mA
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 8A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.27405 $0.5481
5,000 $0.25515 $1.27575
12,500 $0.25200 $3.024
NJVMJD122T4G-VF01 Product Details

NJVMJD122T4G-VF01 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 4A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 8A, 80mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

NJVMJD122T4G-VF01 Features


the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 4V @ 8A, 80mA

NJVMJD122T4G-VF01 Applications


There are a lot of ON Semiconductor NJVMJD122T4G-VF01 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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