BCW60C Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 2mA 5V.A collector emitter saturation voltage of 550mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This product comes in a SOT-23-3 device package from the supplier.Device displays Collector Emitter Breakdown (32V maximal voltage).Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BCW60C Features

the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
the supplier device package of SOT-23-3

BCW60C Applications

There are a lot of ON Semiconductor BCW60C applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter