2SA1774T1G Overview

In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

2SA1774T1G Features

the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz

2SA1774T1G Applications

There are a lot of ON Semiconductor 2SA1774T1G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface