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2SA1797T100P

2SA1797T100P

2SA1797T100P

ROHM Semiconductor

2SA1797T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1797T100P Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e2
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SA1797
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Current - Collector (Ic) (Max) 2A
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) -6V
hFE Min 82
VCEsat-Max 0.35 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.207372 $0.207372
10 $0.195634 $1.95634
100 $0.184560 $18.456
500 $0.174113 $87.0565
1000 $0.164258 $164.258
2SA1797T100P Product Details

2SA1797T100P Overview


In this device, the DC current gain is 82 @ 500mA 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 50mA, 1A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.200MHz is present in the transition frequency.This device can take an input voltage of 50V volts before it breaks down.Maximum collector currents can be below 3A volts.

2SA1797T100P Features


the DC current gain for this device is 82 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 200MHz

2SA1797T100P Applications


There are a lot of ROHM Semiconductor 2SA1797T100P applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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