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2SD2673TL

2SD2673TL

2SD2673TL

ROHM Semiconductor

2SD2673TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2673TL Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2673
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 30mA, 1.5A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 120mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.200800 $5.2008
10 $4.906415 $49.06415
100 $4.628693 $462.8693
500 $4.366692 $2183.346
1000 $4.119521 $4119.521
2SD2673TL Product Details

2SD2673TL Overview


In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 120mV, it allows for maximum design flexibility.When VCE saturation is 250mV @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).In the part, the transition frequency is 200MHz.Breakdown input voltage is 30V volts.Maximum collector currents can be below 3A volts.

2SD2673TL Features


the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 200MHz

2SD2673TL Applications


There are a lot of ROHM Semiconductor 2SD2673TL applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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