2SD2673TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SD2673TL Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-96
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2673
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 200mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
120mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.200800
$5.2008
10
$4.906415
$49.06415
100
$4.628693
$462.8693
500
$4.366692
$2183.346
1000
$4.119521
$4119.521
2SD2673TL Product Details
2SD2673TL Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 120mV, it allows for maximum design flexibility.When VCE saturation is 250mV @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).In the part, the transition frequency is 200MHz.Breakdown input voltage is 30V volts.Maximum collector currents can be below 3A volts.
2SD2673TL Features
the DC current gain for this device is 270 @ 200mA 2V a collector emitter saturation voltage of 120mV the vce saturation(Max) is 250mV @ 30mA, 1.5A the emitter base voltage is kept at 6V the current rating of this device is 3A a transition frequency of 200MHz
2SD2673TL Applications
There are a lot of ROHM Semiconductor 2SD2673TL applications of single BJT transistors.