2SA1943RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2SA1943RTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Number of Pins
3
Weight
6.756g
Transistor Element Material
SILICON
Operating Temperature
-50°C~150°C TJ
Packaging
Tube
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
150W
Frequency
30MHz
Base Part Number
2SA1943
Number of Elements
1
Element Configuration
Single
Power Dissipation
150W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
17A
DC Current Gain (hFE) (Min) @ Ic, Vce
55 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
-250V
Emitter Base Voltage (VEBO)
-5V
hFE Min
55
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.749678
$1.749678
10
$1.650640
$16.5064
100
$1.557208
$155.7208
500
$1.469064
$734.532
1000
$1.385909
$1385.909
2SA1943RTU Product Details
2SA1943RTU Overview
This device has a DC current gain of 55 @ 1A 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In the part, the transition frequency is 30MHz.Maximum collector currents can be below 17A volts.
2SA1943RTU Features
the DC current gain for this device is 55 @ 1A 5V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at -5V a transition frequency of 30MHz
2SA1943RTU Applications
There are a lot of ON Semiconductor 2SA1943RTU applications of single BJT transistors.