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2SA1943RTU

2SA1943RTU

2SA1943RTU

ON Semiconductor

2SA1943RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1943RTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 6.756g
Transistor Element Material SILICON
Operating Temperature-50°C~150°C TJ
PackagingTube
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation150W
Frequency 30MHz
Base Part Number 2SA1943
Number of Elements 1
Element ConfigurationSingle
Power Dissipation150W
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage250V
Transition Frequency 30MHz
Collector Base Voltage (VCBO) -250V
Emitter Base Voltage (VEBO) -5V
hFE Min 55
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1141 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.749678$1.749678
10$1.650640$16.5064
100$1.557208$155.7208
500$1.469064$734.532
1000$1.385909$1385.909

2SA1943RTU Product Details

2SA1943RTU Overview


This device has a DC current gain of 55 @ 1A 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In the part, the transition frequency is 30MHz.Maximum collector currents can be below 17A volts.

2SA1943RTU Features


the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz

2SA1943RTU Applications


There are a lot of ON Semiconductor 2SA1943RTU applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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