PN2907ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
PN2907ATA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
-800mA
Frequency
200MHz
Base Part Number
PN2907A
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
1.6V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Turn On Time-Max (ton)
45ns
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.069728
$0.069728
500
$0.051271
$25.6355
1000
$0.042726
$42.726
2000
$0.039198
$78.396
5000
$0.036633
$183.165
10000
$0.034078
$340.78
15000
$0.032957
$494.355
50000
$0.032406
$1620.3
PN2907ATA Product Details
PN2907ATA Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.6V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -800mA for this device.As you can see, the part has a transition frequency of 200MHz.This device can take an input voltage of 60V volts before it breaks down.When collector current reaches its maximum, it can reach 800mA volts.
PN2907ATA Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of 1.6V the vce saturation(Max) is 1.6V @ 50mA, 500mA the emitter base voltage is kept at -5V the current rating of this device is -800mA a transition frequency of 200MHz
PN2907ATA Applications
There are a lot of ON Semiconductor PN2907ATA applications of single BJT transistors.