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2DD2652-7

2DD2652-7

2DD2652-7

Diodes Incorporated

2DD2652-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

2DD2652-7 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 260MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2DD2652
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Power - Max 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 260MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 12V
Transition Frequency 260MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
Height 1mm
Length 2.15mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2DD2652-7 Product Details

2DD2652-7 Overview


In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 25mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 260MHz is present in the part.Single BJT transistor can be broken down at a voltage of 12V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

2DD2652-7 Features


the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 260MHz

2DD2652-7 Applications


There are a lot of Diodes Incorporated 2DD2652-7 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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