2DD2652-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
2DD2652-7 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
260MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2DD2652
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Power - Max
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
260MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 200mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
12V
Transition Frequency
260MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
Height
1mm
Length
2.15mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2DD2652-7 Product Details
2DD2652-7 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 25mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 260MHz is present in the part.Single BJT transistor can be broken down at a voltage of 12V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2DD2652-7 Features
the DC current gain for this device is 270 @ 200mA 2V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 200mV @ 25mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 260MHz
2DD2652-7 Applications
There are a lot of Diodes Incorporated 2DD2652-7 applications of single BJT transistors.