2SB1188T100Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 3V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 200mA, 2A.The emitter base voltage can be kept at -5V for high efficiency.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 100MHz.This device can take an input voltage of 32V volts before it breaks down.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SB1188T100Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SB1188T100Q Applications
There are a lot of ROHM Semiconductor 2SB1188T100Q applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
