MSB709-RT1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.This device displays a 45V maximum voltage - Collector Emitter Breakdown.
MSB709-RT1 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
MSB709-RT1 Applications
There are a lot of Rochester Electronics, LLC MSB709-RT1 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver