NSS40201LT1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 115mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 115mV @ 200mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.In the part, the transition frequency is 150MHz.An input voltage of 40V volts is the breakdown voltage.Collector current can be as low as 2A volts at its maximum.

NSS40201LT1G Features

the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 115mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

NSS40201LT1G Applications

There are a lot of ON Semiconductor NSS40201LT1G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting