PZT651T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 75MHz.Single BJT transistor can be broken down at a voltage of 60V volts.In extreme cases, the collector current can be as low as 2A volts.
PZT651T1G Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
PZT651T1G Applications
There are a lot of ON Semiconductor PZT651T1G applications of single BJT transistors.
- Muting
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- Inverter
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- Interface
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- Driver
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