2SC3646S-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 100mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 40mA, 400mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In the part, the transition frequency is 120MHz.As a result, it can handle voltages as low as 100V volts.In extreme cases, the collector current can be as low as 1A volts.
2SC3646S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3646S-TD-E Applications
There are a lot of ON Semiconductor 2SC3646S-TD-E applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
