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BCW61DE6327HTSA1

BCW61DE6327HTSA1

BCW61DE6327HTSA1

Infineon Technologies

BCW61DE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCW61DE6327HTSA1 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -32V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -100mA
Frequency 250MHz
Base Part Number BCW61
Number of Elements 1
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage 32V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 550mV
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
Height 900μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.047360 $4.04736
10 $3.818264 $38.18264
100 $3.602136 $360.2136
500 $3.398242 $1699.121
1000 $3.205888 $3205.888
BCW61DE6327HTSA1 Product Details

BCW61DE6327HTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.A collector emitter saturation voltage of 550mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 1.25mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Parts of this part have transition frequencies of 250MHz.Input voltage breakdown is available at 32V volts.During maximum operation, collector current can be as low as 100mA volts.

BCW61DE6327HTSA1 Features


the DC current gain for this device is 380 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz

BCW61DE6327HTSA1 Applications


There are a lot of Infineon Technologies BCW61DE6327HTSA1 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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