ZXTN25100DGQTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN25100DGQTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
1.2W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
1.2W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 600mA, 3A
Collector Emitter Breakdown Voltage
100V
Max Breakdown Voltage
100V
Frequency - Transition
175MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.736442
$0.736442
10
$0.694757
$6.94757
100
$0.655431
$65.5431
500
$0.618331
$309.1655
1000
$0.583331
$583.331
ZXTN25100DGQTA Product Details
ZXTN25100DGQTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 600mA, 3A.Single BJT transistor can be broken down at a voltage of 100V volts.A maximum collector current of 3A volts is possible.
ZXTN25100DGQTA Features
the DC current gain for this device is 300 @ 10mA 2V the vce saturation(Max) is 500mV @ 600mA, 3A
ZXTN25100DGQTA Applications
There are a lot of Diodes Incorporated ZXTN25100DGQTA applications of single BJT transistors.