2SC4135S-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC4135S-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
1W
Base Part Number
2SC4135
Pin Count
3
Power - Max
1W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
-6V
hFE Min
100
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.68000
$0.68
10
$0.59800
$5.98
100
$0.45880
$45.88
500
$0.36268
$181.34
1,000
$0.29014
$0.29014
2SC4135S-E Product Details
2SC4135S-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 100mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.In extreme cases, the collector current can be as low as 2A volts.
2SC4135S-E Features
the DC current gain for this device is 140 @ 100mA 5V the vce saturation(Max) is 400mV @ 100mA, 1A the emitter base voltage is kept at -6V
2SC4135S-E Applications
There are a lot of ON Semiconductor 2SC4135S-E applications of single BJT transistors.