BSS4130AHZGT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
BSS4130AHZGT116 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
200mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
340mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
400MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.55000
$0.55
500
$0.5445
$272.25
1000
$0.539
$539
1500
$0.5335
$800.25
2000
$0.528
$1056
2500
$0.5225
$1306.25
BSS4130AHZGT116 Product Details
BSS4130AHZGT116 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 340mV @ 50mA, 500mA.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
BSS4130AHZGT116 Features
the DC current gain for this device is 270 @ 100mA 2V the vce saturation(Max) is 340mV @ 50mA, 500mA
BSS4130AHZGT116 Applications
There are a lot of ROHM Semiconductor BSS4130AHZGT116 applications of single BJT transistors.