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BSS4130AHZGT116

BSS4130AHZGT116

BSS4130AHZGT116

ROHM Semiconductor

BSS4130AHZGT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BSS4130AHZGT116 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 340mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 400MHz
RoHS StatusRoHS Compliant
In-Stock:14248 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.55000$0.55
500$0.5445$272.25
1000$0.539$539
1500$0.5335$800.25
2000$0.528$1056
2500$0.5225$1306.25

BSS4130AHZGT116 Product Details

BSS4130AHZGT116 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 340mV @ 50mA, 500mA.This device displays a 30V maximum voltage - Collector Emitter Breakdown.

BSS4130AHZGT116 Features


the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 340mV @ 50mA, 500mA

BSS4130AHZGT116 Applications


There are a lot of ROHM Semiconductor BSS4130AHZGT116 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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