PHD13005,127

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Manufacturer part number:PHD13005,127

Manufacturer:WeEn Semiconductors

Description:PHD13005,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:PHD13005,127 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	150°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Power - Max	75W
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 2A 5V
Current - Collector Cutoff (Max)	100μA
Vce Saturation (Max) @ Ib, Ic	1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	4A
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.906739	$0.906739
10	$0.855414	$8.55414
100	$0.806995	$80.6995
500	$0.761315	$380.6575
1000	$0.718223	$718.223

PHD13005,127 Overview

In this device, the DC current gain is 10 @ 2A 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 1A, 4A.Device displays Collector Emitter Breakdown (400V maximal voltage).