Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PHD13005,127

PHD13005,127

PHD13005,127

WeEn Semiconductors

PHD13005,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHD13005,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power - Max 75W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
RoHS StatusRoHS Compliant
In-Stock:10720 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.906739$0.906739
10$0.855414$8.55414
100$0.806995$80.6995
500$0.761315$380.6575
1000$0.718223$718.223

PHD13005,127 Product Details

PHD13005,127 Overview


In this device, the DC current gain is 10 @ 2A 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 1A, 4A.Device displays Collector Emitter Breakdown (400V maximal voltage).

PHD13005,127 Features


the DC current gain for this device is 10 @ 2A 5V
the vce saturation(Max) is 1V @ 1A, 4A

PHD13005,127 Applications


There are a lot of WeEn Semiconductors PHD13005,127 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

Get Subscriber

Enter Your Email Address, Get the Latest News