MMSS8050-L-TP Overview

DC current gain in this device equals 120 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 80mA, 800mA.As a result, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

MMSS8050-L-TP Features

the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz

MMSS8050-L-TP Applications

There are a lot of Micro Commercial Co MMSS8050-L-TP applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface