2SCR552P5T100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 1A.As a result, the part has a transition frequency of 280MHz.There is a breakdown input voltage of 30V volts that it can take.The maximum collector current is 3A volts.
2SCR552P5T100 Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
a transition frequency of 280MHz
2SCR552P5T100 Applications
There are a lot of ROHM Semiconductor 2SCR552P5T100 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
