2SC5658M3T5G Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 180MHz.Breakdown input voltage is 50V volts.Collector current can be as low as 100mA volts at its maximum.
2SC5658M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 180MHz
2SC5658M3T5G Applications
There are a lot of ON Semiconductor 2SC5658M3T5G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
