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NJL4281DG

NJL4281DG

NJL4281DG

ON Semiconductor

NJL4281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJL4281DG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 21 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-5
Number of Pins 5
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 260V
Max Power Dissipation 230W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 35MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 230W
Transistor Application AMPLIFIER
Gain Bandwidth Product 35MHz
Transistor Type NPN + Diode (Isolated)
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 8A
Collector Emitter Breakdown Voltage 350V
Transition Frequency 35MHz
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Height 6.35mm
Length 6.35mm
Width 50.8mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.882000 $18.882
10 $17.813208 $178.13208
100 $16.804913 $1680.4913
500 $15.853691 $7926.8455
1000 $14.956313 $14956.313
NJL4281DG Product Details

NJL4281DG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 5A 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 35MHz in the part.During maximum operation, collector current can be as low as 15A volts.

NJL4281DG Features


the DC current gain for this device is 80 @ 5A 5V
the vce saturation(Max) is 1V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 35MHz

NJL4281DG Applications


There are a lot of ON Semiconductor NJL4281DG applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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