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FCX1051ATA

FCX1051ATA

FCX1051ATA

Diodes Incorporated

FCX1051ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FCX1051ATA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating3A
Frequency 155MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FCX1051A
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product155MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 290 @ 10mA 2V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 340mV @ 100mA, 5A
Collector Emitter Breakdown Voltage40V
Transition Frequency 155MHz
Collector Emitter Saturation Voltage340mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 5V
hFE Min 270
Continuous Collector Current 3A
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11620 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$19.114880$19.11488
10$18.032906$180.32906
100$17.012175$1701.2175
500$16.049222$8024.611
1000$15.140775$15140.775

FCX1051ATA Product Details

FCX1051ATA Overview


In this device, the DC current gain is 290 @ 10mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 340mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 340mV @ 100mA, 5A.Single BJT transistor is recommended to keep the continuous collector voltage at 3A in order to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 155MHz.An input voltage of 40V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 3A volts.

FCX1051ATA Features


the DC current gain for this device is 290 @ 10mA 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 100mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 155MHz

FCX1051ATA Applications


There are a lot of Diodes Incorporated FCX1051ATA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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