NSS40300MZ4T3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 175 @ 1A 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 300mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a transition frequency of 160MHz in the part.Collector current can be as low as 3A volts at its maximum.
NSS40300MZ4T3G Features
the DC current gain for this device is 175 @ 1A 1V
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NSS40300MZ4T3G Applications
There are a lot of ON Semiconductor NSS40300MZ4T3G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
