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BC817K-16R

BC817K-16R

BC817K-16R

Nexperia USA Inc.

BC817K-16R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC817K-16R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 100MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.229000 $0.229
10 $0.216038 $2.16038
100 $0.203809 $20.3809
500 $0.192273 $96.1365
1000 $0.181389 $181.389
BC817K-16R Product Details

BC817K-16R Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BC817K-16R Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC817K-16R Applications


There are a lot of Nexperia USA Inc. BC817K-16R applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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