MJE253G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 200mA 1V DC current gain.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.A maximum collector current of 4A volts is possible.

MJE253G Features

the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is -4A
a transition frequency of 40MHz

MJE253G Applications

There are a lot of ON Semiconductor MJE253G applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting