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DSS20200L-7

DSS20200L-7

DSS20200L-7

Diodes Incorporated

DSS20200L-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS20200L-7 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 600mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DSS20200
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Power - Max 600mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -180mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 7V
hFE Min 250
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.037471 $0.037471
500 $0.027552 $13.776
1000 $0.022960 $22.96
2000 $0.021064 $42.128
5000 $0.019686 $98.43
10000 $0.018313 $183.13
15000 $0.017711 $265.665
50000 $0.017415 $870.75
DSS20200L-7 Product Details

DSS20200L-7 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 1A 2V.A collector emitter saturation voltage of -180mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 180mV @ 200mA, 2A.The emitter base voltage can be kept at 7V for high efficiency.In the part, the transition frequency is 100MHz.An input voltage of 20V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 2A volts.

DSS20200L-7 Features


the DC current gain for this device is 180 @ 1A 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

DSS20200L-7 Applications


There are a lot of Diodes Incorporated DSS20200L-7 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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