DSS20200L-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSS20200L-7 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DSS20200
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Power - Max
600mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-180mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
7V
hFE Min
250
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.037471
$0.037471
500
$0.027552
$13.776
1000
$0.022960
$22.96
2000
$0.021064
$42.128
5000
$0.019686
$98.43
10000
$0.018313
$183.13
15000
$0.017711
$265.665
50000
$0.017415
$870.75
DSS20200L-7 Product Details
DSS20200L-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 1A 2V.A collector emitter saturation voltage of -180mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 180mV @ 200mA, 2A.The emitter base voltage can be kept at 7V for high efficiency.In the part, the transition frequency is 100MHz.An input voltage of 20V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 2A volts.
DSS20200L-7 Features
the DC current gain for this device is 180 @ 1A 2V a collector emitter saturation voltage of -180mV the vce saturation(Max) is 180mV @ 200mA, 2A the emitter base voltage is kept at 7V a transition frequency of 100MHz
DSS20200L-7 Applications
There are a lot of Diodes Incorporated DSS20200L-7 applications of single BJT transistors.