2SC6017-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.A collector emitter saturation voltage of 180mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device can take an input voltage of 50V volts before it breaks down.The maximum collector current is 10A volts.
2SC6017-TL-E Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 360mV @ 250mA, 5A
the emitter base voltage is kept at 6V
2SC6017-TL-E Applications
There are a lot of ON Semiconductor 2SC6017-TL-E applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting