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2SC6082-1E

2SC6082-1E

2SC6082-1E

ON Semiconductor

2SC6082-1E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC6082-1E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 23W
Reach Compliance Code not_compliant
Element Configuration Single
Power - Max 2W
Gain Bandwidth Product 195MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 330mA 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 375mA, 7.5A
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 200mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Continuous Collector Current 15A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.13000 $1.13
50 $0.95640 $47.82
100 $0.78560 $78.56
500 $0.64898 $324.49
1,000 $0.51235 $0.51235
2SC6082-1E Product Details

2SC6082-1E Overview


DC current gain in this device equals 200 @ 330mA 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.A VCE saturation (Max) of 400mV @ 375mA, 7.5A means Ic has reached its maximum value(saturated).A 15A continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 15A volts.

2SC6082-1E Features


the DC current gain for this device is 200 @ 330mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 375mA, 7.5A
the emitter base voltage is kept at 6V

2SC6082-1E Applications


There are a lot of ON Semiconductor 2SC6082-1E applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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