2SC6099-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100mA 5V DC current gain.With a collector emitter saturation voltage of 165mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 165mV @ 100mA, 1A.Keeping the emitter base voltage at 6.5V allows for a high level of efficiency.Single BJT transistor can take a breakdown input voltage of 100V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SC6099-TL-E Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 165mV
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
2SC6099-TL-E Applications
There are a lot of ON Semiconductor 2SC6099-TL-E applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
