2SB1215T-TL-H Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 150mA, 1.5A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A maximum collector current of 3A volts is possible.
2SB1215T-TL-H Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215T-TL-H Applications
There are a lot of ON Semiconductor 2SB1215T-TL-H applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
