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2PA1576Q,135

  • 2PA1576Q,135
  • 2PA1576Q,135

2PA1576Q,135

2PA1576Q,135

Nexperia USA Inc.

2PA1576Q,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2PA1576Q,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2PA1576
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
VCEsat-Max 0.5 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.020493 $0.020493
500 $0.015068 $7.534
1000 $0.012557 $12.557
2000 $0.011520 $23.04
5000 $0.010766 $53.83
10000 $0.010015 $100.15
15000 $0.009686 $145.29
50000 $0.009524 $476.2
2PA1576Q,135 Product Details

2PA1576Q,135 Overview


In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A transition frequency of 100MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.

2PA1576Q,135 Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

2PA1576Q,135 Applications


There are a lot of Nexperia USA Inc. 2PA1576Q,135 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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