2N4398 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N4398 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
5W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 15A 2V
Current - Collector Cutoff (Max)
5mA
Vce Saturation (Max) @ Ib, Ic
4V @ 6A, 30A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
30A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.927000
$7.927
10
$7.478302
$74.78302
100
$7.055002
$705.5002
500
$6.655662
$3327.831
1000
$6.278926
$6278.926
2N4398 PBFREE Product Details
2N4398 PBFREE Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 15A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).There is a 40V maximal voltage in the device due to collector-emitter breakdown.
2N4398 PBFREE Features
the DC current gain for this device is 15 @ 15A 2V the vce saturation(Max) is 4V @ 6A, 30A
2N4398 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N4398 PBFREE applications of single BJT transistors.