BDP948H6327XTSA1 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.There is a transition frequency of 100MHz in the part.This device can take an input voltage of 45V volts before it breaks down.In extreme cases, the collector current can be as low as 3A volts.
BDP948H6327XTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BDP948H6327XTSA1 Applications
There are a lot of Infineon Technologies BDP948H6327XTSA1 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
